Abstract
Mixed-halide wide-band gap perovskites (WBPs) still suffer from losses due to imperfections within the absorber and the segregation of halide ions under external stimuli. Herein, we design a multifunctional passivator (MFP) by mixing bromide salt, formamidinium bromide (FABr) with a p-type self-assembled monolayer (SAM) to target the nonradiative recombination pathways. Photoluminescence measurement shows considerable suppression of nonradiative recombination rates after treatment with FABr. However, WBPs still remained susceptible to halide segregation for which the addition of 25% p-type SAM was effective to decelerate segregation. It is observed that FABr can act as a passivating agent of the donor impurities, shifting the Fermi-level (
) toward the mid-band gap, while p-type SAM could cause an overweight of
toward the valence band. Favorable band bending at the interface could prevent the funneling of carriers toward I-rich clusters. Instead, charge carriers funnel toward an integrated SAM, preventing the accumulation of polaron-induced strain on the lattice. Consequently, n-i-p structured devices with an optimal MFP treatment show an average open-circuit voltage (
) increase of about 20 mV and fill factor (
) increase by 4% compared with the control samples. The unencapsulated devices retained 95% of their initial performance when stored at room temperature under 40% relative humidity for 2800 h.