Injection- and Temperature-Dependence of Type-II 1.2-1.3 μm (GaIn)As/Ga(AsSb) "W"-Lasers

Dominic A. Duffy; Igor P. Marko; Christian Fuchs; Timothy D. Eales; Jannik Lehr; Wolfgang Stolz; Stephen J. Sweeney

doi:10.1109/ISLC51662.2021.9615869

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Injection- and Temperature-Dependence of Type-II 1.2-1.3 μm (GaIn)As/Ga(AsSb) "W"-Lasers

Dominic A. Duffy, Igor P. Marko, Christian Fuchs, Timothy D. Eales, Jannik Lehr, Wolfgang Stolz and Stephen J. Sweeney

2021 27th International Semiconductor Laser Conference (ISLC), pp.1-2

10/10/2021

DOI: https://doi.org/10.1109/ISLC51662.2021.9615869

Abstract

Laser applications

Laser stability

Performance evaluation

Radiative recombination

Semiconductor lasers

Temperature

Thermal stability

Type-II (GaIn)As/Ga(AsSb) "W"-lasers offer the possibility to develop efficient and thermally stable near-infrared lasers. In this work, we investigate the temperature- and injection-dependent properties of "W"-lasers operating between 1200-1260 nm and use this to quantify the influence of radiative and non-radiative recombination on device performance.

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Title: Injection- and Temperature-Dependence of Type-II 1.2-1.3 μm (GaIn)As/Ga(AsSb) "W"-Lasers
Creators: Dominic A. Duffy - University of Surrey
Igor P. Marko - University of Surrey
Christian Fuchs - Philipps University of Marburg
Timothy D. Eales - University of Surrey
Jannik Lehr - Philipps University of Marburg
Wolfgang Stolz - Philipps University of Marburg
Stephen J. Sweeney - University of Surrey
Publication Details: 2021 27th International Semiconductor Laser Conference (ISLC), pp.1-2
Publisher: IEEE
Date published: 10/10/2021
Identifiers: 99822617402346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

Injection- and Temperature-Dependence of Type-II 1.2-1.3 μm (GaIn)As/Ga(AsSb) "W"-Lasers

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