The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

N.F. Masse; I.P. Marko; S.J. Sweeney; A.R. Adams; N. Hatori; M. Sugarawa

doi:10.1109/LEOS.2005.1548150

Back

Conference proceeding

The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

N.F. Masse, I.P. Marko, S.J. Sweeney, A.R. Adams, N. Hatori and M. Sugarawa

2005 IEEE LEOS Annual Meeting Conference Proceedings, pp.604-605

2005

DOI: https://doi.org/10.1109/LEOS.2005.1548150

Abstract

Fiber lasers

Laser theory

Optical devices

Quantum dot lasers

Radiative recombination

Semiconductor lasers

Spontaneous emission

Temperature dependence

Temperature sensors

Wavelength measurement

We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects, this is responsible for the temperature insensitive operation as observed around room temperature in these lasers.

Metrics

12 Record Views

Details

Title: The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers
Creators: N.F. Masse - University of Surrey
I.P. Marko - University of Surrey
S.J. Sweeney - University of Surrey
A.R. Adams - University of Surrey
N. Hatori
M. Sugarawa
Publication Details: 2005 IEEE LEOS Annual Meeting Conference Proceedings, pp.604-605
Publisher: IEEE
Date published: 2005
Identifiers: 99783057302346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

Abstract

Metrics

Details

Usage Policy