- Title
- Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence
- Creators
- SJ SweeneyDA LockAR AdamsJ MenendezCG VanDeWalle
- Contributors
- AMER INST PHYSICS (null)
- Publication Details
- Physics of Semiconductors, Pts A and B, Vol.772, pp.1545-1546
- Conference
- 27th International Conference on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 26/07/2004 - 30/07/2004)
- Date published
- 01/01/2005
- Date submitted
- 23/10/2012
- Identifiers
- 99516639902346
- Academic Unit
- School of Maths and Physics
- Resource Type
- Conference presentation
Conference presentation
Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence
Physics of Semiconductors, Pts A and B, Vol.772, pp.1545-1546
27th International Conference on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 26/07/2004 - 30/07/2004)
01/01/2005
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