Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence

SJ Sweeney; DA Lock; AR Adams; J Menendez; CG VanDeWalle

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Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence

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Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence

SJ Sweeney, DA Lock, AR Adams, J Menendez and CG VanDeWalle

Physics of Semiconductors, Pts A and B, Vol.772, pp.1545-1546

27th International Conference on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 26/07/2004–30/07/2004)

01/01/2005

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Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

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Title: Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence
Creators: SJ Sweeney
DA Lock
AR Adams
J Menendez
CG VanDeWalle
Contributors: AMER INST PHYSICS (null)
Publication Details: Physics of Semiconductors, Pts A and B, Vol.772, pp.1545-1546
Conference: 27th International Conference on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 26/07/2004–30/07/2004)
Publication Date: 01/01/2005
Identifiers: 99516639902346
Academic Unit: School of Maths and Physics
Resource Type: Conference presentation

Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence

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