Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers

SJ Sweeney; LJ Lyons; D Lock; AR Adams

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Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers

SJ Sweeney, LJ Lyons, D Lock and AR Adams

Conference Digest - IEEE International Semiconductor Laser Conference, pp.161-162

01/01/2002

Abstract

The high-energy emission from high power lasers was measured and the facet temperature was extracted. Severe heating was observed up to the onset of catastrophic optical damage (COD). The results showed that under high power operation, the laser facet heat-ups to the melting point of GaAs caused the facet to melt.

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Title: Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers
Creators: SJ Sweeney
LJ Lyons
D Lock
AR Adams
Publication Details: Conference Digest - IEEE International Semiconductor Laser Conference, pp.161-162
Date published: 01/01/2002
Date submitted: 17/05/2017
Identifiers: 99516609502346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Journal article

Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers

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