Abstract
High temperature degradation of the efficiency of 1.5pm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.
- Title
- Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers
- Creators
- Stephen SweeneyPJA Thijs
- Contributors
- IEEE (null)
- Publication Details
- 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, pp.977-978
- Conference
- 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society (TUCSON, AZ, 27/10/2003 - 30/10/2003)
- Publisher
- IEEE
- Date published
- 01/01/2003
- Date submitted
- 27/05/2010
- Identifiers
- 99516584402346
- Copyright
- © 2003 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
- Academic Unit
- School of Computer Science and Electronic Engineering
- Resource Type
- Conference presentation