Abstract
The thermal stabilities of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation were compared. The optical properties and temperature characteristics of GaInNAs quantum-well (QW) lasers were investigated. It was found that defect-related non-radiative recombination made a significant contribution to the total threshold current in the GaInNAs system, while the Auger recombination process made an increasingly significant contribution at higher temperatures.