Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers

R Fehse; Stephen Sweeney; Alfred Adams; D McConville; H Riechert; L Geelhaar

doi:10.1109/ISLC.2004.1382767

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Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers

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Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers

R Fehse, Stephen Sweeney, Alfred Adams, D McConville, H Riechert and L Geelhaar

2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, pp.85-86

19th IEEE International Semiconductor Laser Conference (Matsue, JAPAN, 21/09/2004 - 25/09/2004)

01/01/2004

DOI: https://doi.org/10.1109/ISLC.2004.1382767

Abstract

Science & Technology

Physical Sciences

Optics

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Condensed Matter

Physics

We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3mum GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.

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Title: Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers
Creators: R Fehse
Stephen Sweeney
Alfred Adams
D McConville
H Riechert
L Geelhaar
Contributors: K Messe
IEEE (null)
Publication Details: 2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, pp.85-86
Conference: 19th IEEE International Semiconductor Laser Conference (Matsue, JAPAN, 21/09/2004 - 25/09/2004)
Date published: 01/01/2004
Date submitted: 27/05/2010
Identifiers: 99516478602346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Resource Type: Conference presentation

Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers

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