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Dependence of threshold current on QW position and on pressure in 1.5 mu m InGaAs(P) lasers
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Dependence of threshold current on QW position and on pressure in 1.5 mu m InGaAs(P) lasers

SJ Sweeney, AR Adams, M Silver, EP O'Reilly, JR Watling, AB Walker and PJA Thijs
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.211(1), pp.525-531
8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII) (THESSALONIKI, GREECE, 09/08/1998 - 13/08/1998)
01/01/1999

Abstract

Science & Technology Physical Sciences Physics Condensed Matter Physics PHYSICS CONDENSED MATTER WELL SEMICONDUCTOR-LASERS AUGER RECOMBINATION
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