Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

SJ Sweeney; T Higashi; AR Adams; T Uchida; T Fujii

doi:10.1049/el:19981461

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Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

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Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

SJ Sweeney, T Higashi, AR Adams, T Uchida and T Fujii

ELECTRONICS LETTERS, Vol.34(22), pp.2130-2132

29/10/1998

DOI: https://doi.org/10.1049/el:19981461

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Title: Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure
Creators: SJ Sweeney
T Higashi
AR Adams
T Uchida
T Fujii
Publication Details: ELECTRONICS LETTERS, Vol.34(22), pp.2130-2132
Publisher: IEE-INST ELEC ENG
Date published: 29/10/1998
Date submitted: 17/05/2017
Identifiers: 99516357802346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

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