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The effect of temperature dependent processes on the performance of 1.5-mu m compressively strained InGaAs(P) MQW semiconductor diode lasers
Journal article

The effect of temperature dependent processes on the performance of 1.5-mu m compressively strained InGaAs(P) MQW semiconductor diode lasers

SJ Sweeney, AF Phillips, AR Adams, EP O'Reilly and PJA Thijs
IEEE PHOTONICS TECHNOLOGY LETTERS, Vol.10(8), pp.1076-1078
01/08/1998
DOI: https://doi.org/10.1109/68.701507

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Optics Physics Applied Engineering Physics ENGINEERING ELECTRICAL & ELECTRONIC OPTICS PHYSICS APPLIED laser thermal factors optical fiber communication optical materials/devices optical measurements quantum-well lasers semiconductor lasers strain temperature measurement QUANTUM-WELL LASERS SENSITIVITY GAIN
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