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Auger Recombination Suppression And Band Alignment In GaAsBi/GaAs Heterostructures
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Auger Recombination Suppression And Band Alignment In GaAsBi/GaAs Heterostructures

K Hild, Z Batool, SR Jin, N Hossain, IP Marko, TJC Hosea, X Lu, T Tiedje and SJ Sweeney
PHYSICS OF SEMICONDUCTORS, Vol.1566, pp.488-489
31st International Conference on the Physics of Semiconductors (ICPS) (Zurich, SWITZERLAND, 29/07/2012 - 03/08/2012)
01/01/2013

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Physics Applied Engineering Physics GaAsBi band alignment Auger recombination Physics
Using a combination of experimental and theoretical techniques we present the dependence of the bandgap Eg and the spin orbit splitting energy so, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which so,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.
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