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Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers
Journal article   Peer reviewed

Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers

T Higashi, SJ Sweeney, AF Phillips, AR Adams, EP O'Reilly, T Uchida and T Fujii
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol.5(3), pp.413-419
01/05/1999
DOI: https://doi.org/10.1109/2944.788399

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Optics Physics Applied Engineering Physics ENGINEERING ELECTRICAL & ELECTRONIC OPTICS PHYSICS APPLIED laser thermal factor quantum-well laser semiconductor laser spontaneous emission temperature QUANTUM-WELL LASERS HIGH DIFFERENTIAL GAIN LOW-THRESHOLD CURRENT SEMICONDUCTOR-LASERS AUGER RECOMBINATION SENSITIVITY PERFORMANCE OPERATION DIODES SPEED
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