Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m

K O'Brien; SJ Sweeney; AR Adams; BN Murdin; A Salhi; Y Rouillard; A Joullie

doi:10.1063/1.2243973

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Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m

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Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m

K O'Brien, SJ Sweeney, AR Adams, BN Murdin, A Salhi, Y Rouillard and A Joullie

APPLIED PHYSICS LETTERS, Vol.89(5), pp.?-?

31/07/2006

DOI: https://doi.org/10.1063/1.2243973

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

CONTINUOUS-WAVE OPERATION

QUANTUM-WELL LASERS

TEMPERATURE-DEPENDENCE

THRESHOLD CURRENT

ROOM-TEMPERATURE

SEMICONDUCTOR-LASERS

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Title: Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m
Creators: K O'Brien
SJ Sweeney
AR Adams
BN Murdin
A Salhi
Y Rouillard
A Joullie
Publication Details: APPLIED PHYSICS LETTERS, Vol.89(5), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 31/07/2006
Date submitted: 23/10/2012
Identifiers: 99515290602346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Language: English
Resource Type: Journal article

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m

Abstract

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