- Title
- Carrier recombination processes in 1.3 mu m and 1.5 mu m InGaAs(P)-based lasers at cryogenic temperatures and high pressures
- Creators
- SJ SweeneySR JinCN AhmadAR AdamsBN Murdin
- Contributors
- WILEY-V C H VERLAG GMBH (Publisher)
- Publication Details
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.241(14), pp.3399-3404
- Conference
- 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11) (Berkeley, CA, 02/08/2004 - 05/08/2004)
- Date published
- 01/11/2004
- Date submitted
- 17/05/2017
- Identifiers
- 99515289202346
- Academic Unit
- University of Surrey; School of Maths and Physics
- Resource Type
- Conference presentation
Conference presentation
Carrier recombination processes in 1.3 mu m and 1.5 mu m InGaAs(P)-based lasers at cryogenic temperatures and high pressures
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.241(14), pp.3399-3404
11th International Conference on High-Pressure Semiconductor Physics (HPSP-11) (Berkeley, CA, 02/08/2004 - 05/08/2004)
01/11/2004
Metrics
52 Record Views