A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure

SJ Sweeney; T Higashi; AR Adams; T Uchida; T Fujii

doi:10.1080/08957950008200947

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A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure

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A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure

SJ Sweeney, T Higashi, AR Adams, T Uchida and T Fujii

HIGH PRESSURE RESEARCH, Vol.18(1-6), pp.49-55

XXXVIIth Meeting of the European-High-Pressure-Research-Group (EHPRG) (UNIV MONTPELLIER, MONTPELLIER, FRANCE, 09/09/1999 - 11/09/1999)

01/01/2000

DOI: https://doi.org/10.1080/08957950008200947

Abstract

Science & Technology

Physical Sciences

Physics

Multidisciplinary

Physics

PHYSICS

MULTIDISCIPLINARY

semiconductor laser

threshold current

temperature sensitivity

pressure

quantum well

AlGaInAs

1.3-MU-M

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Title: A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure
Creators: SJ Sweeney
T Higashi
AR Adams
T Uchida
T Fujii
Contributors: GORDON BREACH SCI PUBL LTD (Publisher)
Publication Details: HIGH PRESSURE RESEARCH, Vol.18(1-6), pp.49-55
Conference: XXXVIIth Meeting of the European-High-Pressure-Research-Group (EHPRG) (UNIV MONTPELLIER, MONTPELLIER, FRANCE, 09/09/1999 - 11/09/1999)
Date published: 01/01/2000
Date submitted: 17/05/2017
Identifiers: 99515180602346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure

Abstract

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