Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers

SA Sayid; IP Marko; AR Adams; SJ Sweeney; P Barrios; P Poole

doi:10.1109/ISLC.2010.5642746

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Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers

SA Sayid, IP Marko, AR Adams, SJ Sweeney, P Barrios and P Poole

IEEE Poceeedings of 22nd International Semiconductor Laser Conference, pp.75-76

ISLC 2010 (Kyoto, Japan, 26/09/2010 - 30/09/2010)

2010

DOI: https://doi.org/10.1109/ISLC.2010.5642746

Abstract

Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a To of ~72K from 220K-290K.

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Title: Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers
Creators: SA Sayid
IP Marko
AR Adams
SJ Sweeney
P Barrios
P Poole
Publication Details: IEEE Poceeedings of 22nd International Semiconductor Laser Conference, pp.75-76
Conference: ISLC 2010 (Kyoto, Japan, 26/09/2010 - 30/09/2010)
Date published: 2010
Date submitted: 19/10/2012
Identifiers: 99515172202346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers

Abstract

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