Abstract
In this work we focus on the MOVPE growth of Ga(NAsP) laser structures for electrical current injection lattice matched on exactly orientated Si substrates and their structural characterization.
- Title
- MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates
- Creators
- S LiebichM ZimprichP LudewigA BeyerK VolzW StolzB KunertN HossainSR JinSJ Sweeney
- Publication Details
- 22nd IEEE International Semiconductor Laser Conference, pp.143-144
- Conference
- 22nd IEEE ISLC (Kyoto, Japan, 26/09/2010 - 30/09/2010)
- Date published
- 2010
- Date submitted
- 23/10/2012
- Identifiers
- 99515144802346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation