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Temperature and pressure dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based quantum well lasers
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Temperature and pressure dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based quantum well lasers

SJ Sweeney, D McConville, NF Masse, RX Bouyssou, AR Adams, CN Ahmad and C Hanke
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.241(14), pp.3391-3398
11th International Conference on High-Pressure Semiconductor Physics (HPSP-11) (Berkeley, CA, 02/08/2004 - 05/08/2004)
01/11/2004

Abstract

Science & Technology Physical Sciences Physics Condensed Matter Physics PHYSICS CONDENSED MATTER MQW SEMICONDUCTOR-LASERS PERFORMANCE NM
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