Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure

R Fehse; SJ Sweeney; AR Adams; EP O'Reilly; AY Egorov; H Riechert; S Illek

doi:10.1049/el:20010049

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Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure

Journal article

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Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure

R Fehse, SJ Sweeney, AR Adams, EP O'Reilly, AY Egorov, H Riechert and S Illek

ELECTRONICS LETTERS, Vol.37(2), pp.92-93

18/01/2001

DOI: https://doi.org/10.1049/el:20010049

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Science & Technology

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Engineering

Electrical & Electronic

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

TEMPERATURE-DEPENDENCE

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Title: Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure
Creators: R Fehse
SJ Sweeney
AR Adams
EP O'Reilly
AY Egorov
H Riechert
S Illek
Publication Details: ELECTRONICS LETTERS, Vol.37(2), pp.92-93
Publisher: IEE-INST ELEC ENG
Date published: 18/01/2001
Date submitted: 17/05/2017
Identifiers: 99515080202346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure

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