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The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers
Journal article   Peer reviewed

The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers

AF Phillips, SJ Sweeney, AR Adams and PJA Thijs
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol.5(3), pp.401-412
01/05/1999
DOI: https://doi.org/10.1109/2944.788398

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Optics Physics Applied Engineering Physics ENGINEERING ELECTRICAL & ELECTRONIC OPTICS PHYSICS APPLIED laser thermal factors optical fiber communication optical measurement quantum-well lasers semiconductor lasers strain temperature temperature measurement QUANTUM-WELL LASERS 1.3 MU-M INTERVALENCE BAND ABSORPTION DOUBLE-HETEROSTRUCTURE LASERS THRESHOLD CURRENT-DENSITY AUGER-RECOMBINATION CARRIER LEAKAGE SPONTANEOUS EMISSION ACTIVE LAYER DIODE-LASERS
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