Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

J Chamings; S Ahmed; AR Adams; SJ Sweeney; VA Odnoblyudov; CW Tu; B Kunert; W Stolz

doi:10.1002/pssb.200880537

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Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

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Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

J Chamings, S Ahmed, AR Adams, SJ Sweeney, VA Odnoblyudov, CW Tu, B Kunert and W Stolz

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.246(3), pp.527-531

13th International Conference on High Pressure Semiconductor Physics (HPSP-13) (Fortaleza, BRAZIL, 22/07/2008–25/07/2008)

01/03/2009

DOI: https://doi.org/10.1002/pssb.200880537

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

QUANTUM-WELL LASERS

HYDROSTATIC-PRESSURE

GAINNAS ALLOYS

GAP

TEMPERATURE

PERFORMANCE

DEPENDENCE

SEMICONDUCTORS

EFFICIENCY

NM

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Title: Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
Creators: J Chamings
S Ahmed
AR Adams
SJ Sweeney
VA Odnoblyudov
CW Tu
B Kunert
W Stolz
Contributors: WILEY-V C H VERLAG GMBH (null)
Publication Details: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.246(3), pp.527-531
Conference: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13) (Fortaleza, BRAZIL, 22/07/2008–25/07/2008)
Publication Date: 01/03/2009
Identifiers: 99514977502346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

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