Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers

R Fehse; S Jin; SJ Sweeney; AR Adams; EP O'Reilly; H Riechert; S Illek; AY Egorov

doi:10.1049/el:20011033

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Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers

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Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers

R Fehse, S Jin, SJ Sweeney, AR Adams, EP O'Reilly, H Riechert, S Illek and AY Egorov

ELECTRONICS LETTERS, Vol.37(25), pp.1518-1520

06/12/2001

DOI: https://doi.org/10.1049/el:20011033

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Title: Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers
Creators: R Fehse
S Jin
SJ Sweeney
AR Adams
EP O'Reilly
H Riechert
S Illek
AY Egorov
Publication Details: ELECTRONICS LETTERS, Vol.37(25), pp.1518-1520
Publisher: IEE-INST ELEC ENG
Date published: 06/12/2001
Date submitted: 17/05/2017
Identifiers: 99514884602346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers

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