Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

NF Masse; AR Adams; SJ Sweeney

doi:10.1063/1.2722041

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Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

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Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

NF Masse, AR Adams and SJ Sweeney

APPLIED PHYSICS LETTERS, Vol.90(16), pp.?-?

16/04/2007

DOI: https://doi.org/10.1063/1.2722041

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

SEMICONDUCTOR-LASERS

THRESHOLD CURRENT

HIGH-PRESSURE

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Title: Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature
Creators: NF Masse
AR Adams
SJ Sweeney
Publication Details: APPLIED PHYSICS LETTERS, Vol.90(16), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 16/04/2007
Date submitted: 18/10/2012
Identifiers: 99514429102346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Language: English
Resource Type: Journal article

Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

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