Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers

R Fehse; AR Adams; SJ Sweeney; S Tomic; H Reichart; A Ramakrishnan

doi:10.1016/S0038-1101(02)00403-3

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Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers

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Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers

R Fehse, AR Adams, SJ Sweeney, S Tomic, H Reichart and A Ramakrishnan

SOLID-STATE ELECTRONICS, Vol.47(3), pp.501-506

Spring Meeting of the European-Materials-Research-Society (E-MRS) (STRASBOURG, FRANCE, 18/06/2002 - 21/06/2002)

01/03/2003

DOI: https://doi.org/10.1016/S0038-1101(02)00403-3

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Physics

Condensed Matter

Engineering

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

QUANTUM-WELL LASERS

TEMPERATURE-DEPENDENCE

SEMICONDUCTOR-LASERS

ROOM-TEMPERATURE

GAN(X)AS1-X

ALLOYS

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Title: Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers
Creators: R Fehse
AR Adams
SJ Sweeney
S Tomic
H Reichart
A Ramakrishnan
Contributors: PERGAMON-ELSEVIER SCIENCE LTD (Publisher)
Publication Details: SOLID-STATE ELECTRONICS, Vol.47(3), pp.501-506
Conference: Spring Meeting of the European-Materials-Research-Society (E-MRS) (STRASBOURG, FRANCE, 18/06/2002 - 21/06/2002)
Date published: 01/03/2003
Date submitted: 17/05/2017
Identifiers: 99514397302346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers

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