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A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers
Journal article   Peer reviewed

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers

R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev and H Riechert
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol.8(4), pp.801-810
01/07/2002
DOI: https://doi.org/10.1109/JSTQE.2002.801684

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Optics Physics Applied Engineering Physics ENGINEERING ELECTRICAL & ELECTRONIC OPTICS PHYSICS APPLIED epitaxial growth gallium alloys laser thermal factors optical fiber communication quantum well lasers semiconductor defects semiconductor device measurements semiconductor device modeling 1.3 MU-M TEMPERATURE-DEPENDENCE THRESHOLD CURRENT SEMICONDUCTOR-LASERS ROOM-TEMPERATURE CARRIER LEAKAGE GANXAS1-X HETEROSTRUCTURES OPTIMIZATION NITROGEN
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