Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE

N Hossain; SR Jin; SJ Sweeney; S Liebich; S Reinhard; K Volz; B Kunert; W Stolz

doi:10.1109/PHOTONICS.2010.5698759

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Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE

N Hossain, SR Jin, SJ Sweeney, S Liebich, S Reinhard, K Volz, B Kunert and W Stolz

23rd Annual Meeting of the IEEE Photonics Society, pp.65-66

Photonics 2010 (Denver, USA, 07/11/2010 - 11/11/2010)

2010

DOI: https://doi.org/10.1109/PHOTONICS.2010.5698759

Abstract

We are reporting for the first time, lasing operation at room temperature (RT) with a low threshold current density (Jth) in novel direct band-gap Ga(NAsP)/GaP QW lasers. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.

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Title: Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE
Creators: N Hossain
SR Jin
SJ Sweeney
S Liebich
S Reinhard
K Volz
B Kunert
W Stolz
Contributors: IEEE (null)
Publication Details: 23rd Annual Meeting of the IEEE Photonics Society, pp.65-66
Conference: Photonics 2010 (Denver, USA, 07/11/2010 - 11/11/2010)
Date published: 2010
Date submitted: 23/10/2012
Identifiers: 99514156302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE

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