Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

SR Jin; SJ Sweeney; S Tomic; AR Adams; H Riechert

doi:10.1002/pssb.200301607

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Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

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Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

SR Jin, SJ Sweeney, S Tomic, AR Adams and H Riechert

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.235(2), pp.486-490

10th International Conference on High Pressures in Semiconductor Physics (HPSP-X) (UNIV SURREY, GUILDFORD, ENGLAND, 05/08/2002–08/08/2002)

01/02/2003

DOI: https://doi.org/10.1002/pssb.200301607

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

1.3-MU-M

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Title: Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements
Creators: SR Jin
SJ Sweeney
S Tomic
AR Adams
H Riechert
Contributors: WILEY-V C H VERLAG GMBH (Publisher)
Publication Details: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.235(2), pp.486-490
Conference: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X) (UNIV SURREY, GUILDFORD, ENGLAND, 05/08/2002–08/08/2002)
Publication Date: 01/02/2003
Identifiers: 99514145202346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

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