Abstract
We investigated the influence of Auger recombination from 90 K to above room temperature and found its contribution to the threshold current at 300 K to be about 80% and 50% at 1.5 μm and at 1.3 μm respectively.
- Title
- Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature
- Creators
- SJ SweeneyAF PhillipsAR AdamsEP O'ReillyPJA Thijs
- Publication Details
- Conference Digest - IEEE International Semiconductor Laser Conference, pp.63-64
- Date published
- 01/12/1998
- Date submitted
- 17/05/2017
- Identifiers
- 99513703802346
- Academic Unit
- University of Surrey; School of Maths and Physics
- Resource Type
- Journal article