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Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers
Journal article

Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

SJ Sweeney, AF Phillips, AR Adams, EP O'Reilly, M Silver and PJA Thijs
Conference on Lasers and Electro-Optics Europe - Technical Digest, pp.304-?
01/01/1998

Abstract

Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm and 1.5 μm compressively strained lasers from 90 K to 370 K and the temperature sensitivity parameter, To. In addition, L, the integrated spontaneous emission emanating from the side of the devices was collected. By measuring L at the threshold as a function of temperature, it was verified that the relationship To(IRad)= T holds true even to above room temperature.

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