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Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots
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Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots

IP Marko, NF Masse, SJ Sweeney, AR Adams, N Hatori, M Sugawara, W Jantsch and F Schaffler
Physics of Semiconductors, Pts A and B, Vol.893, pp.837-838
28th International Conference on the Physics of Semiconductors (ICPS-28) (Vienna, AUSTRIA, 24/07/2006 - 28/07/2006)
01/01/2007

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Optics Physics Multidisciplinary Physics Condensed Matter Engineering Physics quantum dot laser p-doping recombination mechanisms non-radiative recombination carrier transport LASERS
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