Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures

SJ Sweeney; G Knowles; TE Sale; AR Adams

doi:10.1002/1521-3951(200101)223:2<567::AID-PSSB567>3.0.CO;2-6

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Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures

Journal article

Peer reviewed

Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures

SJ Sweeney, G Knowles, TE Sale and AR Adams

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.223(2), pp.567-572

01/01/2001

DOI: https://doi.org/10.1002/1521-3951(200101)223:2<567::AID-PSSB567>3.0.CO;2-6

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

BAND-STRUCTURE

ALGAINP

DIODE

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Title: Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures
Creators: SJ Sweeney
G Knowles
TE Sale
AR Adams
Publication Details: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.223(2), pp.567-572
Publisher: WILEY-V C H VERLAG GMBH
Date published: 01/01/2001
Date submitted: 17/05/2017
Identifiers: 99513203602346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures

Abstract

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