Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature

SJ Sweeney; T Higashi; A Andreev; AR Adams; T Uchida; T Fujii

doi:10.1002/1521-3951(200101)223:2<573::AID-PSSB573>3.0.CO;2-I

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Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature

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Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature

SJ Sweeney, T Higashi, A Andreev, AR Adams, T Uchida and T Fujii

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.223(2), pp.573-579

01/01/2001

DOI: https://doi.org/10.1002/1521-3951(200101)223:2<573::AID-PSSB573>3.0.CO;2-I

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Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

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Title: Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature
Creators: SJ Sweeney
T Higashi
A Andreev
AR Adams
T Uchida
T Fujii
Publication Details: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.223(2), pp.573-579
Publisher: WILEY-V C H VERLAG GMBH
Date published: 01/01/2001
Date submitted: 17/05/2017
Identifiers: 99513191502346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature

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