The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers

MT Crowley; IP Marko; NF Masse; AD Andreev; SJ Sweeney; EP O'Reilly; AR Adams

doi:10.1109/ISLC.2008.4636037

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The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers

MT Crowley, IP Marko, NF Masse, AD Andreev, SJ Sweeney, EP O'Reilly and AR Adams

IEEE Proceedings of 21st International Semiconductor Laser Conference, pp.117-118

21st ISLC 2008 (Sorento, Italy, 14/09/2008 - 18/09/2008)

2008

DOI: https://doi.org/10.1109/ISLC.2008.4636037

Abstract

The optical matrix element for excited-states is significantly weaker than the ground-state leading to thermally stable radiative recombination. This is not so for non-radiative Auger recombination, causing a sharp increase in threshold current with temperature.

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Title: The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers
Creators: MT Crowley
IP Marko
NF Masse
AD Andreev
SJ Sweeney
EP O'Reilly
AR Adams
Contributors: IEEE (null)
Publication Details: IEEE Proceedings of 21st International Semiconductor Laser Conference, pp.117-118
Conference: 21st ISLC 2008 (Sorento, Italy, 14/09/2008 - 18/09/2008)
Date published: 2008
Date submitted: 19/10/2012
Identifiers: 99513132002346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers

Abstract

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