AlGalnN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques

G Blume; TJC Hosea; SJ Sweeney; P de Mierry; D Lancefield

doi:10.1049/ip-opt:20045020

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AlGalnN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques

Journal article

Peer reviewed

AlGalnN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques

G Blume, TJC Hosea, SJ Sweeney, P de Mierry and D Lancefield

IEE PROCEEDINGS-OPTOELECTRONICS, Vol.152(2), pp.118-124

01/04/2005

DOI: https://doi.org/10.1049/ip-opt:20045020

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Optics

Telecommunications

Engineering

LIGHT-EMITTING-DIODES

QUANTUM-WELLS

LOCALIZED EXCITONS

INGAN SINGLE

MODULATION

GAN

SPECTROSCOPY

TEMPERATURE

PARAMETERS

EPITAXY

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Title: AlGalnN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques
Creators: G Blume
TJC Hosea
SJ Sweeney
P de Mierry
D Lancefield
Publication Details: IEE PROCEEDINGS-OPTOELECTRONICS, Vol.152(2), pp.118-124
Publisher: IEE-INST ELEC ENG
Date published: 01/04/2005
Date submitted: 23/10/2012
Identifiers: 99512882802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

AlGalnN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques

Abstract

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