High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

SA Cripps; TJC Hosea; SJ Sweeney; D Lock; T Leinonen; J Lyytikainen; M Dumitrescu

doi:10.1049/ip-opt:20045022

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High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

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High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

SA Cripps, TJC Hosea, SJ Sweeney, D Lock, T Leinonen, J Lyytikainen and M Dumitrescu

IEE PROCEEDINGS-OPTOELECTRONICS, Vol.152(2), pp.103-109

01/04/2005

DOI: https://doi.org/10.1049/ip-opt:20045022

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Title: High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies
Creators: SA Cripps
TJC Hosea
SJ Sweeney
D Lock
T Leinonen
J Lyytikainen
M Dumitrescu
Publication Details: IEE PROCEEDINGS-OPTOELECTRONICS, Vol.152(2), pp.103-109
Publisher: IEE-INST ELEC ENG
Date published: 01/04/2005
Date submitted: 23/10/2012
Identifiers: 99512737602346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

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