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Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy
Journal article   Peer reviewed

Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy

ZL Bushell, P Ludewig, N Knaub, Z Batool, K Hild, W Stolz, SJ Sweeney and K Volz
JOURNAL OF CRYSTAL GROWTH, Vol.396, pp.79-84
15/06/2014
DOI: https://doi.org/10.1016/j.jcrysgro.2014.03.038

Abstract

Science & Technology Physical Sciences Technology Crystallography Materials Science Multidisciplinary Physics Applied Materials Science Physics CRYSTALLOGRAPHY MATERIALS SCIENCE MULTIDISCIPLINARY PHYSICS APPLIED Metal-organic vapour phase epitaxy Bismuth compounds GaNAsBi Nitrides Semiconducting III-V materials Semiconducting quaternary alloys MOLECULAR-BEAM EPITAXY IMPROVED LUMINESCENCE EFFICIENCY MODULATION SPECTROSCOPY (GAIN)(NAS) SEMICONDUCTORS GANASBI ORIGIN
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