The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Z Batool; K Hild; TJC Hosea; X Lu; T Tiedje; SJ Sweeney

doi:10.1063/1.4728028

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The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

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The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje and SJ Sweeney

JOURNAL OF APPLIED PHYSICS, Vol.111(11), pp.?-?

01/06/2012

DOI: https://doi.org/10.1063/1.4728028

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

MOLECULAR-BEAM EPITAXY

MODULATION SPECTROSCOPY

GAAS1-XBIX

PHOTOREFLECTANCE

SEMICONDUCTORS

TEMPERATURE

DEPENDENCE

GAP

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Title: The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Creators: Z Batool
K Hild
TJC Hosea
X Lu
T Tiedje
SJ Sweeney
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.111(11), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 01/06/2012
Date submitted: 25/09/2012
Identifiers: 99512546002346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Abstract

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