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The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers
Journal article   Open access  Peer reviewed

The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers

N Hossain, K Hild, SR Jin, S-Q Yu, SR Johnson, D Ding, Y-H Zhang and SJ Sweeney
APPLIED PHYSICS LETTERS, Vol.102(4), pp.?-?
28/01/2013
DOI: https://doi.org/10.1063/1.4789859

Abstract

Science & Technology Physical Sciences Physics Applied Physics PHYSICS APPLIED MOLECULAR-BEAM EPITAXY AUGER RECOMBINATION DOT LASERS TEMPERATURE GAAS PERFORMANCE HETEROSTRUCTURES PRESSURE MBE
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