Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers

NF Masse; SJ Sweeney; IP Marko; AR Adams; N Hatori; M Sugawara

doi:10.1063/1.2387114

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Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers

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Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers

NF Masse, SJ Sweeney, IP Marko, AR Adams, N Hatori and M Sugawara

APPLIED PHYSICS LETTERS, Vol.89(19), pp.?-?

06/11/2006

DOI: https://doi.org/10.1063/1.2387114

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Title: Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers
Creators: NF Masse
SJ Sweeney
IP Marko
AR Adams
N Hatori
M Sugawara
Publication Details: APPLIED PHYSICS LETTERS, Vol.89(19), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 06/11/2006
Date submitted: 30/04/2012
Identifiers: 99512219202346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Language: English
Resource Type: Journal article

Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers

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