Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers

NF Massé; SJ Sweeney; IP Marko; AD Andreev; AR Adams; N Hatori; M Sugawara

doi:10.1109/ISLC.2006.1708127

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Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers

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Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers

NF Massé, SJ Sweeney, IP Marko, AD Andreev, AR Adams, N Hatori and M Sugawara

20th IEEE International Semi-conductor Laser Conference - Conference Digest, pp.143-144

ISLC 2006 (Hawaii, USA, 17/09/2006 - 21/09/2006)

2006

DOI: https://doi.org/10.1109/ISLC.2006.1708127

Abstract

The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on the performances of quantum dot lasers. Controlling the transport of the carriers using the inhomogeneous broadening makes temperature stable threshold current possible

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Title: Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers
Creators: NF Massé
SJ Sweeney
IP Marko
AD Andreev
AR Adams
N Hatori
M Sugawara
Contributors: IEEE (null)
Publication Details: 20th IEEE International Semi-conductor Laser Conference - Conference Digest, pp.143-144
Conference: ISLC 2006 (Hawaii, USA, 17/09/2006 - 21/09/2006)
Date published: 2006
Date submitted: 30/04/2012
Identifiers: 99512164802346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Resource Type: Conference presentation

Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers

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