Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers

Igor Marko; Alfred Adams; Stephen Sweeney; IR Sellers; DJ Mowbray; MS Skolnick; HY Liu; KM Groom

doi:10.1109/ISLC.2004.1382753

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Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers

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Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers

Igor Marko, Alfred Adams, Stephen Sweeney, IR Sellers, DJ Mowbray, MS Skolnick, HY Liu and KM Groom

2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, pp.57-58

19th IEEE International Semiconductor Laser Conference (Matsue, JAPAN, 21/09/2004 - 25/09/2004)

01/01/2004

DOI: https://doi.org/10.1109/ISLC.2004.1382753

Abstract

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We show that even in quantum dot lasers with very low threshold current density (Jth=740-50 A/cm(2) at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises similar to60-70% of Jth at 300 K.

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Title: Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers
Creators: Igor Marko
Alfred Adams
Stephen Sweeney
IR Sellers
DJ Mowbray
MS Skolnick
HY Liu
KM Groom
Contributors: K Messe
IEEE (null)
Publication Details: 2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, pp.57-58
Conference: 19th IEEE International Semiconductor Laser Conference (Matsue, JAPAN, 21/09/2004 - 25/09/2004)
Date published: 01/01/2004
Date submitted: 27/05/2010
Identifiers: 99512152802346
Copyright: Copyright 2004 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Resource Type: Conference presentation

Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers

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