Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers

K Hild; IP Marko; SR Johnson; S-Q Yu; Y-H Zhang; SJ Sweeney

doi:10.1063/1.3625938

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Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers

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Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers

K Hild, IP Marko, SR Johnson, S-Q Yu, Y-H Zhang and SJ Sweeney

APPLIED PHYSICS LETTERS, Vol.99(7), pp.?-?

15/08/2011

DOI: https://doi.org/10.1063/1.3625938

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

QUANTUM-DOT LASERS

VCSELS

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Title: Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers
Creators: K Hild
IP Marko
SR Johnson
S-Q Yu
Y-H Zhang
SJ Sweeney
Publication Details: APPLIED PHYSICS LETTERS, Vol.99(7), pp.?-?
Publisher: AMER INST PHYSICS
Publication Date: 15/08/2011
Identifiers: 99512079502346; WOS:000294208900010
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers

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