Abstract
In spite of the almost ideal variation of the radiative current of 1.3 mu m GaAsSb/GaAs-based lasers, the threshold current, J(th), is high due to non-radiative recombination accounting for 90% J(th) near room temperature. This also gives rise to low T-0 values similar to 60K close to room temperature, similar to that for InGaAsP/InP.