Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers

Igor Marko; N Masse; SJ Sweeney; AR Adams; IR Sellers; DJ Mowbray; MS Skolnick; HY Liu; KM Groom

doi:10.1109/LEOS.2005.1548048

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Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers

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Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers

Igor Marko, N Masse, SJ Sweeney, AR Adams, IR Sellers, DJ Mowbray, MS Skolnick, HY Liu and KM Groom

The 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2005. (LEOS 2005), pp.401-402

IEEE

18th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Sydney, NSW, Australia, 22/10/2005 - 28/10/2005)

22/10/2005

DOI: https://doi.org/10.1109/LEOS.2005.1548048

Abstract

Gain saturation increases the radiative component, J(rad), of the threshold current density, J(th), and its contribution to the thermal sensitivity of J(th) in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.

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Title: Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers
Creators: Igor Marko
N Masse
SJ Sweeney
AR Adams
IR Sellers
DJ Mowbray
MS Skolnick
HY Liu
KM Groom
Publication Details: The 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2005. (LEOS 2005), pp.401-402
Conference: 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Sydney, NSW, Australia, 22/10/2005 - 28/10/2005)
Publisher: IEEE
Date published: 22/10/2005
Date submitted: 27/05/2010
Identifiers: 99510984602346
Copyright: 2005 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference presentation

Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers

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