Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers

NF Masse; E Homeyer; IP Marko; AR Adams; SJ Sweeney; O Dehaese; R Piron; F Grillot; S Loualiche

doi:10.1063/1.2790777

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Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers

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Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers

NF Masse, E Homeyer, IP Marko, AR Adams, SJ Sweeney, O Dehaese, R Piron, F Grillot and S Loualiche

APPLIED PHYSICS LETTERS, Vol.91(13), pp.?-?

24/09/2007

DOI: https://doi.org/10.1063/1.2790777

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

HYDROSTATIC-PRESSURE

OPERATION

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Title: Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers
Creators: NF Masse
E Homeyer
IP Marko
AR Adams
SJ Sweeney
O Dehaese
R Piron
F Grillot
S Loualiche
Publication Details: APPLIED PHYSICS LETTERS, Vol.91(13), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 24/09/2007
Date submitted: 30/04/2012
Identifiers: 99512172102346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Language: English
Resource Type: Journal article

Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers

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