Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 mu m VCSEL applications

G Blume; TJC Hosea; SJ Sweeney; SR Johnson; JB Wang; YH Zhang

doi:10.1049/ip-opt:20055024

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Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 mu m VCSEL applications

Journal article

Peer reviewed

Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 mu m VCSEL applications

G Blume, TJC Hosea, SJ Sweeney, SR Johnson, JB Wang and YH Zhang

IEE PROCEEDINGS-OPTOELECTRONICS, Vol.152(2), pp.110-117

01/04/2005

DOI: https://doi.org/10.1049/ip-opt:20055024

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Optics

Telecommunications

Engineering

EMITTING LASER STRUCTURE

PHOTOMODULATED REFLECTANCE

OPTICAL-PROPERTIES

HYDROSTATIC-PRESSURE

QUANTUM-WELLS

GAAS

PHOTOLUMINESCENCE

RECOMBINATION

TEMPERATURE

TRANSITIONS

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Title: Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 mu m VCSEL applications
Creators: G Blume
TJC Hosea
SJ Sweeney
SR Johnson
JB Wang
YH Zhang
Publication Details: IEE PROCEEDINGS-OPTOELECTRONICS, Vol.152(2), pp.110-117
Publisher: IEE-INST ELEC ENG
Date published: 01/04/2005
Date submitted: 23/10/2012
Identifiers: 99512855002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 mu m VCSEL applications

Abstract

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