Abstract
Herein, we report on a facile room-temperature bulk scale solid-state synthesis of highly luminescent color-tunable CsPbX
3
nanocrystals (NCs) with superior optoelectronic performance and exceptional ambient stability. The composition tuned all-inorganic perovskite NCs exhibit high photoluminescence (PL) quantum yield with adjustable emission color in the range 416–691 nm and high color purity (linewidth ∼14 nm). The as-grown NCs are highly stable up to seven months under ambient conditions, and the post-growth annealing results in reduced non-radiative recombination centers and improved PL quantum yield (∼95%) in the perovskite NCs. The low-temperature PL study reveals high exciton binding energy in the NCs, and the highly luminescent perovskite NCs were utilized for the demonstration of color-tunable light-emitting diodes with high luminous efficiency (∼42 lm W
−1
for CsPbBr
3
). We further integrate the CsPbBr
3
NCs on direct CVD grown large-area monolayer MoS
2
on Si/SiO
2
substrates and fabricate a vertical heterojunction photodetector (PD). For the first time, direct CVD grown large area 1L-MoS
2
on Si/SiO
2
has been utilized here to demonstrate a 1L-MoS
2
/CsPbBr
3
PD of type-II heterojunction with high responsivity (24.3 A W
−1
at 405 nm) and extremely fast photo-response with photocurrent growth and decay times of 5.5 μs and 24.0 μs, respectively. The superior performance of the heterojunction PD is attributed to the fast transfer of photogenerated electrons from CsPbBr
3
NCs to monolayer MoS
2
and n-doping of the MoS
2
. Our interpretation is fully supported by density functional theory based electronic structure calculations and Kelvin probe force microscopy measurements, which show direct evidence of the charge transfer at the MoS
2
/CsPbBr
3
heterojunction due to a type-II band alignment. Our results pave the way for the large-scale synthesis of highly stable and color-tunable CsPbX
3
NCs and their application in bright LEDs and a high-performance photodetector with a fast response.