Abstract
Nuclear reactions (d,p) are often used to perform depth profiling of light elements in solids. In particular, protons coming from C-12(d,p(0)) C-13 and C-13(d,p(0)) C-14 reactions are emitted at very different energies. Consequently these two reactions can be used to depth profile C-12 and C-13 simultaneously. Nevertheless the cross-section of C-13(d,p(0)) C-14 reaction is 10 times smaller than the C-12(d,p(0)) C-13 one. So, the geometry of detection must be judiciously chosen in order to depth profile these two elements with a high sensitivity and good resolution. In the framework of this study we have performed 400 keV C-13 ions implantation into polished copper substrates at different temperatures and implanted doses with a 2 MV Tandem accelerator. Using the reactions described above, we have studied the evolution of C-13 depth profile as a function of implanted doses and temperature. We have also determined the origin of surface contamination that appears during the implantation process.