Requirements for a GaAsBi 1eV sub-cell in a GaAs-based multi-junction solar cell

T Thomas; A Mellor; NP Hylton; M Fuehrer; D Alonso-Alvarez; A Braun; NJ Ekins-Daukes; JPR David; SJ Sweeney

doi:10.1088/0268-1242/30/9/094010

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Requirements for a GaAsBi 1eV sub-cell in a GaAs-based multi-junction solar cell

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Requirements for a GaAsBi 1eV sub-cell in a GaAs-based multi-junction solar cell

T Thomas, A Mellor, NP Hylton, M Fuehrer, D Alonso-Alvarez, A Braun, NJ Ekins-Daukes, JPR David and SJ Sweeney

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.30(9), ARTN 09401

01/09/2015

DOI: https://doi.org/10.1088/0268-1242/30/9/094010

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Materials Science

Multidisciplinary

Physics

Condensed Matter

Engineering

Materials Science

Physics

bismide

photovoltaics

solar cell

multi-junction

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Title: Requirements for a GaAsBi 1eV sub-cell in a GaAs-based multi-junction solar cell
Creators: T Thomas
A Mellor
NP Hylton
M Fuehrer
D Alonso-Alvarez
A Braun
NJ Ekins-Daukes
JPR David
SJ Sweeney
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.30(9), ARTN 09401
Publisher: IOP PUBLISHING LTD
Date published: 01/09/2015
Date submitted: 17/05/2017
Identifiers: 99511092702346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Requirements for a GaAsBi 1eV sub-cell in a GaAs-based multi-junction solar cell

Abstract

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